Seminar Sponsored by SWC & Chemistry - Prof. Xiujuan Zhang

Event Date: Monday, July 25, 2016

Seminar Sponsored by the Soochow-Western Centre for
Synchrotron Radiation Research and the Department of Chemistry

Professor Xiujuan Zhang
FUNSOM, Soochow University
China

will present a talk entitled:

"Patterning of Organic Single-Crystal Nanowisre Arrays for High-performance Optoelectronic Devices"

Monday, July 25, 2016
at 10:30 AM
Room ChB 115, Chemistry Building

Abstract:

Small-molecule organic semiconductor micro/nanocrystals (SMOSN) have unique properties that can complement or rival their counterpart inorganic semiconductor nanocrystals, like flexibility, versatility, and tunability in electronic and optical properties. They are identified to be prospective system to construct new-generation low-cost flexible, stretchable and wearable electronic and optoelectronic devices. However, the scale-up of SMOSN for technological applications is difficult because their growth orientation and location are usually stochastic in nature. The alignment and patterning of SMOSN at desired locations are prerequisite for their device applications in practice. In this talk, I will introduce a series of highly efficient yet simple methods for the patterned and aligned growth of SMOSN. By using these methods, a broad range of organic small molecule semiconductors, such as 2, 6-diphenyl anthracene, pentacene (DPA), bistriisopropylsi-lylethynyl pentacene (TIPS-PEN), Dioctylbenzothienobenzothiophene (C₈-BTBT), and 9, 10-bis(phenylethynyl) anthracene (BPEA) nanowire (NW) arrays at designated locations with high-precision and high-efficiency can be obtained. Simultaneously, the positions and shapes of the NW patterns can be readily tuned by photolithography with high precision. These strategies enable wafer-scale and uniform fabrication of organic NW arrays with nearly the same accuracy, reliability, and flexibility with photolithography. The 2, 6-diphenyl anthracene (DPA) NWs field-effect transistors (FETs) arrays show record-high carrier mobility up to 39.36 cm² V^-1 s^-1 (average mobility of up to ~30.3 cm² V^-1 s^-1) and uniform mobility with standard deviation of 5.36 cm² V^-1 s^-1. The high mobility and highly uniform FETs arrays hold promise for realizing organic micro/nano-electronics commercial application.

 References

[1] W. Deng , X. J. Zhang, L. Wang, J. C. Wang, Q. X. Shang, X. H. Zhang, L. M. Huang, J. S. Jie, Adv. Mater. 2015, 27, 7305.

 [2] X. J. Zhang, J. S. Jie, W. Deng, Q. X. Shang, J. C. Wang, H. Wang, X. F. Chen, X. H. Zhang, Adv. Mater. 2016, 28, 2475.

Refreshments will be served 10 minutes prior to talk

For more information, please see below contact name

 

Seminar Sponsored by SWC & Chemistry - Prof. Xiujuan Zhang